feb. 2009 CM100DU-24NFH application high frequency switching use (30khz to 60khz). gradient amplifier, induction heating, power supply, etc. mitsubishi igbt modules CM100DU-24NFH high power switching use ? i c ................................................................... 100a ? v ces ......................................................... 1200v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm c2e1 e2 c1 g2e2 e1g1 cm g1e1 e2 g2 c2e1 c1 e2 94 16 16 2.5 21.2 7.5 2.5 25 7 17 23 24 114 418 13 48 23 4 12 13.5 80 0.25 2 6.5 mounting holes 3?5nuts 12mm deep tab #110. t=0.5 30 +1 ?.5 label circuit diagram t c measured point
feb. 2009 2 collector-emitter voltage gate-emitter voltage maximum collector dissipation maximum collector dissipation junction temperature storage temperature isolation voltage w eight v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v v cc = 600v, i c = 100a, v ge = 15v v cc = 600v, i c = 100a v ge = 15v r g = 3.1? , inductive load i e = 100a i e = 100a, v ge = 0v igbt part (1/2 module) fwdi part (1/2 module) case to heat sink, thermal compound applied *2 (1/2 module) igbt part (1/2 module) fwdi part (1/2 module) i c = 10ma, v ce = 10v i c = 100a, v ge = 15v v ce = 10v v ge = 0v 1200 20 100 200 100 200 560 730 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 mitsubishi igbt modules CM100DU-24NFH high power switching use v v a a a a w w c c v rms n ?m n ?m g 1 0.5 6.5 16 1.3 0.3 100 50 250 150 150 3.5 0.22 0.47 0.17 *3 0.29 *3 31 ma a nf nf nf nc ns ns ns ns c v k/w k/w k/w k/w k/w ? 5.0 5.0 450 5.0 0.07 3.1 6v v 4.5 7.5 ns gate-emitter threshold voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c? q r th(j-c? r r g symbol parameter v ge(th) v ce(sat) * 1 : case temperature (t c ) measured point is shown in page outline drawing. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. * 3 : if you use this value, r th(f-a) should be measured just under the chips. * 4 : case temperature (t c ? measured point is just under the chips. note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. no short circuit capability is designed. g-e short c-e short operation (note 2) pulse (note 2) operation (note 2) pulse (note 2) t c = 25 c t c ?= 25 c *4 terminals to base plate, f = 60hz, ac 1 minute main terminals m5 screw mounting m6 screw t ypical value symbol parameter collector current emitter current mounting torque conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. test conditions maximum ratings (tj = 25 c, unless otherwise specified) electrical characteristics (tj = 25 c, unless otherwise specified) collector cutoff current gate leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time turn -on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance *4 external gate resistance t j = 25 c t j = 125 c
feb. 2009 3 mitsubishi igbt modules CM100DU-24NFH high power switching use 14 10 ? 10 0 10 1 10 2 2 3 5 7 2 3 5 7 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v c ies c oes c res 0 5 10 15 20 v ce = 10v 0 1 6 7 8 9 2 3 4 5 04080 160 200 120 t j = 25c t j = 125c v ge = 15v 0 20 40 60 80 100 120 140 160 180 200 0246810 0 20 40 60 80 100 120 140 160 180 200 v ge =20 (v) t j = 25c 12 9 8 11 10 13 0 2 4 6 8 10 6101418 8121620 t j = 25c i c = 200a i c = 100a i c = 40a 10 1 10 2 2 3 5 7 012 4 35 10 3 2 3 5 7 t j = 25c t j = 125c 15 t j = 25c t j = 125c free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) performance curves
feb. 2009 4 mitsubishi igbt modules CM100DU-24NFH high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t j = 25c t rr i rr 10 1 10 2 23 57 10 3 23 57 2 3 5 7 2 3 5 7 10 0 10 2 10 1 10 3 2 3 5 7 t d(off) t d(on) t f t r 0 5 10 15 20 0 100 200 300 400 500 600 700 v cc = 600v v cc = 400v i c = 100a conditions: v cc = 600v v ge = 15v r g = 3.1? t j = 125c inductive load conditions: v cc = 600v v ge = 15v r g = 3.1? t j = 25c inductive load 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse t c = 25c per unit base = r th(j c) = 0.22k / w 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse t c = 25c per unit base = r th(j c) = 0.47k / w 10 1 10 2 2 3 5 7 10 3 2 3 5 7 transient thermal impedance characteristics ( igbt part ) time ( s ) normalized transient thermal impedance z th(j ?c) half-bridge switching time characteristics ( typical ) switching time ( ns ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( ns ) emitter current i e ( a ) reverse recovery current i rr ( a ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) time ( s ) transient thermal impedance characteristics ( fwdi part ) normalized transient thermal impedance z th(j ?c)
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